SQJ260 Series

Catalog

MOSFET 2N-CH 60V 20A PPAK SO8

Part	Power - Max	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Configuration	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Qualification	Current - Continuous Drain (Id) @ 25°C	Technology
Vishay General Semiconductor - Diodes Division SQJ260EP-T1_GE3	27 W 48 W	8.5 mOhm 19 mOhm	20 nC	40 nC	PowerPAK® SO-8 Dual	1100 pF 2500 pF	PowerPAK® SO-8 Dual Asymmetric	60 V	Surface Mount	2 N-Channel (Dual)	2.5 V	-55 °C	175 ░C	Automotive	AEC-Q101	20 A 54 A	MOSFET (Metal Oxide)