IRC830 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 500V 4.5A TO220-5
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Mounting Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | FET Feature | Rds On (Max) @ Id, Vgs | Technology | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Supplier Device Package | Drain to Source Voltage (Vdss) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 20 V | Through Hole | 4 V | 38 nC | 610 pF | 4.5 A | Current Sensing | 1.5 Ohm | MOSFET (Metal Oxide) | N-Channel | 10 V | 74 W | TO-220-5 | 500 V | TO-220-5 |