IS46TR85120 Series
Manufacturer: ISSI, Integrated Silicon Solution Inc
IC DRAM 4GBIT PARALLEL 78TWBGA
| Part | Memory Interface | Qualification | Memory Format | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Clock Frequency | Memory Type | Mounting Type | Technology | Memory Organization | Supplier Device Package | Access Time | Write Cycle Time - Word, Page | Memory Size | Voltage - Supply [Min] | Voltage - Supply [Max] | Grade | Supplier Device Package [x] | Supplier Device Package [y] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | Parallel | AEC-Q100 | DRAM | 78-TFBGA | -40 °C | 105 °C | 800 MHz | Volatile | Surface Mount | SDRAM - DDR3 | 512 M | 78-TWBGA (9x10.5) | 20 ns | 15 ns | 512 kB | 1.425 V | 1.575 V | Automotive | ||
ISSI, Integrated Silicon Solution Inc | Parallel | AEC-Q100 | DRAM | 78-TFBGA | -40 °C | 105 °C | 800 MHz | Volatile | Surface Mount | SDRAM - DDR3L | 512 M | 78-TWBGA (9x10.5) | 20 ns | 15 ns | 512 kB | 1.283 V | 1.45 V | Automotive | ||
ISSI, Integrated Silicon Solution Inc | Parallel | AEC-Q100 | DRAM | 78-TFBGA | -40 °C | 105 °C | 933 MHz | Volatile | Surface Mount | SDRAM - DDR3L | 512 M | 78-TWBGA | 20 ns | 15 ns | 512 kB | 1.283 V | 1.45 V | Automotive | 8 | 10.5 |
ISSI, Integrated Silicon Solution Inc | Parallel | AEC-Q100 | DRAM | 78-TFBGA | -40 °C | 105 °C | 800 MHz | Volatile | Surface Mount | SDRAM - DDR3L | 512 M | 78-TWBGA | 20 ns | 15 ns | 512 kB | 1.283 V | 1.45 V | Automotive | 8 | 10.5 |
ISSI, Integrated Silicon Solution Inc | Parallel | AEC-Q100 | DRAM | 78-TFBGA | -40 °C | 95 °C | 800 MHz | Volatile | Surface Mount | SDRAM - DDR3L | 512 M | 78-TWBGA (9x10.5) | 20 ns | 15 ns | 512 kB | 1.283 V | 1.45 V | Automotive | ||
ISSI, Integrated Silicon Solution Inc | Parallel | AEC-Q100 | DRAM | 78-TFBGA | -40 °C | 105 °C | 933 MHz | Volatile | Surface Mount | SDRAM - DDR3L | 512 M | 78-TWBGA (9x10.5) | 20 ns | 15 ns | 512 kB | 1.283 V | 1.45 V | Automotive | ||
ISSI, Integrated Silicon Solution Inc | Parallel | AEC-Q100 | DRAM | 78-TFBGA | -40 °C | 95 °C | 800 MHz | Volatile | Surface Mount | SDRAM - DDR3L | 512 M | 78-TWBGA (9x10.5) | 20 ns | 15 ns | 512 kB | 1.283 V | 1.45 V | Automotive | ||
ISSI, Integrated Silicon Solution Inc | Parallel | AEC-Q100 | DRAM | 78-TFBGA | -40 °C | 105 °C | 933 MHz | Volatile | Surface Mount | SDRAM - DDR3L | 512 M | 78-TWBGA | 20 ns | 15 ns | 512 kB | 1.283 V | 1.45 V | Automotive | 8 | 10.5 |
ISSI, Integrated Silicon Solution Inc | Parallel | AEC-Q100 | DRAM | 78-TFBGA | -40 °C | 105 °C | 800 MHz | Volatile | Surface Mount | SDRAM - DDR3L | 512 M | 78-TWBGA | 20 ns | 15 ns | 512 kB | 1.283 V | 1.45 V | Automotive | 8 | 10.5 |
ISSI, Integrated Silicon Solution Inc | Parallel | AEC-Q100 | DRAM | 78-TFBGA | -40 °C | 95 °C | 800 MHz | Volatile | Surface Mount | SDRAM - DDR3L | 512 M | 78-TWBGA | 20 ns | 15 ns | 512 kB | 1.283 V | 1.45 V | Automotive | 8 | 10.5 |