TK3R1A04PL Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
12V - 300V MOSFETS, N-CH MOSFET, 40 V, 0.0031 Ω@10V, TO-220SIS, U-MOSⅨ-H
| Part | Rds On (Max) @ Id, Vgs | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Operating Temperature | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Power Dissipation (Max) | FET Type | Package / Case | Mounting Type | Technology | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 3.8 mOhm | 20 V | 63.4 nC | 82 A | 4670 pF | TO-220SIS | 175 °C | 40 V | 2.4 V | 36 W | N-Channel | TO-220-3 Full Pack | Through Hole | MOSFET (Metal Oxide) | 4.5 V 10 V |