IRFI640 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 200V 9.8A TO220-3
| Part | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Technology | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Mounting Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 4 V | 1300 pF | TO-220-3 Full Pack Isolated Tab | MOSFET (Metal Oxide) | 40 W | 10 V | -55 °C | 150 °C | 180 mOhm | Through Hole | TO-220-3 | 200 V | 70 nC | 20 V | N-Channel |
Vishay General Semiconductor - Diodes Division | 4 V | 1300 pF | TO-220-3 Full Pack Isolated Tab | MOSFET (Metal Oxide) | 40 W | 10 V | -55 °C | 150 °C | 180 mOhm | Through Hole | TO-220-3 | 200 V | 70 nC | 20 V | N-Channel |