IRLZ34 Series

Catalog

MOSFET N-CH 60V 30A D2PAK

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Technology	Vgs (Max)	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division IRLZ34STRL	60 V	50 mOhm	-55 °C	175 ░C	4 V 5 V	N-Channel	1600 pF	2 V	30 A	3.7 W 88 W	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	35 nC	Surface Mount	MOSFET (Metal Oxide)	10 V
Vishay General Semiconductor - Diodes Division IRLZ34SPBF	60 V	50 mOhm	-55 °C	175 ░C	4 V 5 V	N-Channel	1600 pF	2 V	30 A	3.7 W 88 W	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	35 nC	Surface Mount	MOSFET (Metal Oxide)	10 V
Vishay General Semiconductor - Diodes Division IRLZ34S	60 V	50 mOhm	-55 °C	175 ░C	4 V 5 V	N-Channel	1600 pF	2 V	30 A	3.7 W 88 W	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	35 nC	Surface Mount	MOSFET (Metal Oxide)	10 V
Vishay General Semiconductor - Diodes Division IRLZ34PBF	60 V	50 mOhm	-55 °C	175 ░C	4 V 5 V	N-Channel	1600 pF	2 V	30 A		TO-220AB	TO-220-3	35 nC	Through Hole	MOSFET (Metal Oxide)	10 V	88 W
Vishay General Semiconductor - Diodes Division IRLZ34PBF-BE3	60 V	50 mOhm	-55 °C	175 ░C		N-Channel	1600 pF	2 V	30 A		TO-220AB	TO-220-3	35 nC	Through Hole	MOSFET (Metal Oxide)	10 V	88 W