SI4906 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2N-CH 40V 6.6A 8SOIC
| Part | Configuration | Technology | Vgs(th) (Max) @ Id [Max] | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Power - Max [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 2.2 V | 625 pF | 6.6 A | Surface Mount | -55 °C | 150 °C | 39 mOhm | 22 nC | 40 V | 3.1 W | 8-SOIC | 3.9 mm | 0.154 in | 8-SOIC |