SBE807 Series

1.0 A, 30 V, Schottky Barrier Diode, Low IR

Catalog

1.0 A, 30 V, Schottky Barrier Diode, Low IR

Part	Diode Configuration	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Package / Case	Reverse Recovery Time (trr)	Current - Average Rectified (Io) (per Diode)	Speed	Technology	Current - Reverse Leakage @ Vr
ON Semiconductor SBE807-TL-W	2 Independent	-55 °C	125 °C	530 mV	5-CPH	30 V	Surface Mount	SC-74A SOT-753	10 ns	1 A	200 mA 500 ns	Schottky	15 µA
ON Semiconductor SBE807-TL-E	2 Independent	-55 °C	125 °C	530 mV	5-CPH	30 V	Surface Mount	SC-74A SOT-753	10 ns	1 A	200 mA 500 ns	Schottky	15 µA
ON Semiconductor SBE807-S-TL-W	2 Independent	-55 °C	125 °C	530 mV	5-CPH	30 V	Surface Mount	SC-74A SOT-753	10 ns	1 A	200 mA 500 ns	Schottky	15 µA

1.0 A, 30 V, Schottky Barrier Diode, Low IR

• Low switching noise

• Low reverse current (VR=16V, IR max=15A)

SBE807 is Schottky Barrier Diode, 30V, 1A, Low IR for High frequency rectification Applications.