SQ2362 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 60V 4.3A SOT23-3
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Technology | Drain to Source Voltage (Vdss) | Vgs (Max) | Package / Case | Qualification | Grade | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) [Max] | Supplier Device Package | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 175 ░C | 4.5 V 10 V | MOSFET (Metal Oxide) | 60 V | 20 V | SC-59 SOT-23-3 TO-236-3 | AEC-Q101 | Automotive | Surface Mount | 12 nC | 68 mOhm | 3 W | SOT-23-3 (TO-236) | 2.5 V | 4.3 A | 550 pF | N-Channel |
Vishay General Semiconductor - Diodes Division | -55 °C | 175 ░C | 10 V | MOSFET (Metal Oxide) | 60 V | 20 V | SC-59 SOT-23-3 TO-236-3 | AEC-Q101 | Automotive | Surface Mount | 12 nC | 95 mOhm | 3 W | SOT-23-3 (TO-236) | 2.5 V | 4.3 A | 550 pF | N-Channel |