RN1708 Series
Manufacturer: Toshiba Semiconductor and Storage
NPN X 2 BRT Q1BSR=22KOHM Q1BER=4
| Part | Transistor Type | Mounting Type | Current - Collector Cutoff (Max) [Max] | Current - Collector (Ic) (Max) [Max] | Power - Max [Max] | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Package / Case | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Supplier Device Package | Vce Saturation (Max) @ Ib, Ic | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | Surface Mount | 500 nA | 100 mA | 100 mW | 250 MHz | 22 kOhms | 47 kOhms | SOT-553 | 80 | ESV | 300 mV | 50 V |
Toshiba Semiconductor and Storage | 2 NPN - Pre-Biased (Dual) | Surface Mount | 500 nA | 100 mA | 200 mW | 250 MHz | 22 kOhms | 47 kOhms | 5-TSSOP SC-70-5 SOT-353 | 80 | USV | 300 mV | 50 V |