NXH010P90MNF1 Series

SiC Module, 2-PACK Half Bridge Topology, 900 V, 10 mohm SiC M2 MOSFET

Catalog

SiC Module, 2-PACK Half Bridge Topology, 900 V, 10 mohm SiC M2 MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Technology	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor NXH010P90MNF1PG	7007 pF	2 N-Channel (Dual) Common Source	Module	Chassis Mount	154 A	4.3 V	14 mOhm	546.4 nC	328 W	Silicon Carbide (SiC)	150 °C	-40 °C

SiC Module, 2-PACK Half Bridge Topology, 900 V, 10 mohm SiC M2 MOSFET

• Recommended gate voltage 15V - 18V

• Low thermal resistance

• Options for TIM or no TIM

The NXH010P90MNF1 is a SiC MOSFET module containing a 10 mohm 900V SiC MOSFET half bridge and an NTC thermistor in an F1 module.