SSM3J307 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET P-CH 20V 5A TSM
| Part | Power Dissipation (Max) [Max] | Technology | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Rds On (Max) @ Id, Vgs | Mounting Type | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature | FET Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 700 mW | MOSFET (Metal Oxide) | 1 V | 5 A | 8 V | 19 nC | 1170 pF | SC-59 SOT-23-3 TO-236-3 | 31 mOhm | Surface Mount | TSM | 1.5 V 4.5 V | 150 °C | P-Channel | 20 V |