50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ
| Part | Current - Collector Cutoff (Max) [Max] | Supplier Device Package | Vce Saturation (Max) @ Ib, Ic | Resistor - Emitter Base (R2) | Package / Case | Mounting Type | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector (Ic) (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Transistor Type |
|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 1 µA | SOT-666 | 100 mV | 47 kOhms | SOT-563 SOT-666 | Surface Mount | 300 mW | 50 V | 100 mA | 100 | 1 NPN 1 PNP - Pre-Biased (Dual) |
Nexperia USA Inc. | 1 µA | SOT-666 | 100 mV | 47 kOhms | SOT-563 SOT-666 | Surface Mount | 300 mW | 50 V | 100 mA | 100 | 1 NPN 1 PNP - Pre-Biased (Dual) |