TPCC8105 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -30 V, 0.0078 Ω@10V, TSON ADVANCE, U-MOSⅥ
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Package / Case | Vgs (Max) | Rds On (Max) @ Id, Vgs | Mounting Type | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Technology | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 76 nC | 3240 pF | 700 mW | 30 W | 30 V | 23 A | 2 V | 8-VDFN Exposed Pad | -25 V 20 V | 7.8 mOhm | Surface Mount | P-Channel | 4.5 V 10 V | 8-TSON Advance (3.3x3.3) | MOSFET (Metal Oxide) | 150 °C |
Toshiba Semiconductor and Storage | 76 nC | 3240 pF | 700 mW | 30 W | 30 V | 23 A | 2 V | 8-VDFN Exposed Pad | -25 V 20 V | 7.8 mOhm | Surface Mount | P-Channel | 4.5 V 10 V | 8-TSON Advance (3.3x3.3) | MOSFET (Metal Oxide) | 150 °C |