SIHA18 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CHANNEL 600V 18A TO220
| Part | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Vgs (Max) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 4 V | 92 nC | 600 V | N-Channel | 10 V | Through Hole | 30 V | 34 W | 18 A | 202 mOhm | 1640 pF | TO-220-3 Full Pack | TO-220 Full Pack | -55 °C | 150 °C | MOSFET (Metal Oxide) |