IRF630 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 200V 9A I2PAK
| Part | Technology | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Drain to Source Voltage (Vdss) | Package / Case | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 4 V | 400 mOhm | N-Channel | -55 °C | 150 °C | 43 nC | 10 V | 20 V | 800 pF | Through Hole | 200 V | I2PAK TO-262-3 Long Leads TO-262AA | I2PAK | 9 A | ||
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 4 V | 400 mOhm | N-Channel | -55 °C | 150 °C | 43 nC | 10 V | 20 V | 800 pF | Surface Mount | 200 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | TO-263 (D2PAK) | 9 A | 3 W 74 W | |
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 4 V | 400 mOhm | N-Channel | -55 °C | 150 °C | 43 nC | 20 V | 800 pF | Through Hole | 200 V | TO-220-3 | TO-220AB | 9 A | 74 W | ||
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 4 V | 400 mOhm | N-Channel | -55 °C | 150 °C | 43 nC | 10 V | 20 V | 800 pF | Surface Mount | 200 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | TO-263 (D2PAK) | 9 A | 3 W 74 W | |
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 4 V | 400 mOhm | N-Channel | -55 °C | 150 °C | 43 nC | 10 V | 20 V | 800 pF | Surface Mount | 200 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | TO-263 (D2PAK) | 9 A | 3 W 74 W | |
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 4 V | 400 mOhm | N-Channel | -55 °C | 150 °C | 43 nC | 10 V | 20 V | 800 pF | Surface Mount | 200 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | TO-263 (D2PAK) | 9 A | 3 W 74 W | |
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 4 V | 400 mOhm | N-Channel | -55 °C | 150 °C | 43 nC | 10 V | 20 V | 800 pF | Surface Mount | 200 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | TO-263 (D2PAK) | 9 A | 3 W 74 W |