TK40S06 Series

Catalog

12V - 300V MOSFETS, N-CH MOSFET, 60 V, 40 A, 0.0105 Ω@10V, DPAK+

Part	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs	Grade	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	FET Type	Package / Case	Qualification	Operating Temperature	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage TK40S06N1L,LQ	26 nC	MOSFET (Metal Oxide)	10.5 mOhm	Automotive	4.5 V 10 V	88.2 W	40 A	20 V	DPAK+	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101	175 °C	2.5 V	Surface Mount	1650 pF	60 V
Toshiba Semiconductor and Storage TK40S06N1L,LXHQ	26 nC	MOSFET (Metal Oxide)	18 mOhm	Automotive	4.5 V 10 V	88.2 W	40 A	20 V	DPAK+	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101	175 °C	2.5 V	Surface Mount	1650 pF	60 V