GBU8 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 600V 3.9A GBU
| Part | Technology | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Diode Type | Supplier Device Package | Package / Case | Voltage - Peak Reverse (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Standard | Through Hole | -55 °C | 150 °C | 3.9 A | 5 µA | Single Phase | GBU | 4-SIP GBU | 600 V |
Vishay General Semiconductor - Diodes Division | Standard | Through Hole | -55 °C | 150 °C | 3.9 A | 5 µA | Single Phase | GBU | 4-SIP GBU | 600 V |
Vishay General Semiconductor - Diodes Division | Standard | Through Hole | -55 °C | 150 °C | 8 A | 5 µA | Single Phase | GBU | 4-SIP GBU | 100 V |
Vishay General Semiconductor - Diodes Division | Standard | Through Hole | -55 °C | 150 °C | 3.9 A | 5 µA | Single Phase | GBU | 4-SIP GBU | 800 V |
Vishay General Semiconductor - Diodes Division | Standard | Through Hole | -55 °C | 150 °C | 3.9 A | 5 µA | Single Phase | GBU | 4-SIP GBU | 600 V |
Vishay General Semiconductor - Diodes Division | Standard | Through Hole | -55 °C | 150 °C | 3.9 A | 5 µA | Single Phase | GBU | 4-SIP GBU | 800 V |
Vishay General Semiconductor - Diodes Division | Standard | Through Hole | -55 °C | 150 °C | 3.9 A | 5 µA | Single Phase | GBU | 4-SIP GBU | 800 V |
Vishay General Semiconductor - Diodes Division | Standard | Through Hole | -55 °C | 150 °C | 3.9 A | 5 µA | Single Phase | GBU | 4-SIP GBU | 800 V |
Vishay General Semiconductor - Diodes Division | Standard | Through Hole | -55 °C | 150 °C | 8 A | 5 µA | Single Phase | GBU | 4-SIP GBU | 1000 V |
Vishay General Semiconductor - Diodes Division | Standard | Through Hole | -55 °C | 150 °C | 3.9 A | 5 µA | Single Phase | GBU | 4-SIP GBU | 600 V |