2SK2847 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFET N-CH 900V 8A TO3PIS
| Part | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Supplier Device Package | Technology | Mounting Type | Package / Case | Operating Temperature | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | N-Channel | 10 V | 58 nC | 85 W | TO-3P(N)IS | MOSFET (Metal Oxide) | Through Hole | SC-65-3 TO-3P-3 | 150 °C | 1.4 Ohm | 8 A | 30 V | 900 V | 2040 pF |