Catalog
650V 7A TO-263, Low-noise Power MOSFET
Description
AI
R6507ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Beta
⌘K
650V 7A TO-263, Low-noise Power MOSFET
650V 7A TO-263, Low-noise Power MOSFET
| Part | Supplier Device Package | Rds On (Max) @ Id, Vgs | FET Type | Mounting Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Technology | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Package / Case | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | LPTS | 665 mOhm | N-Channel | Surface Mount | 650 V | 10 V | 20 V | MOSFET (Metal Oxide) | 150 °C | 390 pF | 4 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 7 A | 78 W | 20 nC |