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20V P-Channel Enhancement Mode MOSFET
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20V P-Channel Enhancement Mode MOSFET
20V P-Channel Enhancement Mode MOSFET
| Part | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Technology | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Vgs (Max) | Power Dissipation (Max) [Max] | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | 487 pF | Surface Mount | MOSFET (Metal Oxide) | SOT-23-3 | 3.8 A | 1 V | -55 °C | 150 °C | 6.3 nC | 20 V | 1.8 V 4.5 V | SC-59 SOT-23-3 TO-236-3 | 8 V | 800 mW | P-Channel |