MURT400 Series

Catalog

DIODE MODULE GP 100V 200A 3TOWER

Part	Diode Configuration	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case	Reverse Recovery Time (trr)	Technology	Current - Average Rectified (Io) (per Diode)	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Voltage - Forward (Vf) (Max) @ If [Max]
GeneSiC Semiconductor MURT40010	1 Pair Common Cathode	Chassis Mount	-55 °C	150 °C	Three Tower	125 ns	Standard	200 A	200 mA 500 ns	100 V	Three Tower	1.3 V
GeneSiC Semiconductor MURT40060	1 Pair Common Cathode	Chassis Mount	-55 °C	150 °C	Three Tower	240 ns	Standard	200 A	200 mA 500 ns	600 V	Three Tower	1.7 V
GeneSiC Semiconductor MURT40020	1 Pair Common Cathode	Chassis Mount	-55 °C	150 °C	Three Tower	125 ns	Standard	200 A	200 mA 500 ns	200 V	Three Tower	1.3 V
GeneSiC Semiconductor MURT40005	1 Pair Common Cathode	Chassis Mount	-55 °C	150 °C	Three Tower	125 ns	Standard	200 A	200 mA 500 ns	50 V	Three Tower	1.3 V
GeneSiC Semiconductor MURT40040	1 Pair Common Cathode	Chassis Mount	-55 °C	150 °C	Three Tower	180 ns	Standard	200 A	200 mA 500 ns	400 V	Three Tower		1.35 V
GeneSiC Semiconductor MURT40040R	1 Pair Common Anode	Chassis Mount	-55 °C	150 °C	Three Tower	180 ns	Reverse Polarity Standard	200 A	200 mA 500 ns	400 V	Three Tower		1.35 V
GeneSiC Semiconductor MURT40020R	1 Pair Common Anode	Chassis Mount	-55 °C	150 °C	Three Tower	125 ns	Standard	200 A	200 mA 500 ns	200 V	Three Tower	1.3 V
GeneSiC Semiconductor MURT40005R	1 Pair Common Anode	Chassis Mount	-55 °C	150 °C	Three Tower	125 ns	Standard	200 A	200 mA 500 ns	50 V	Three Tower	1.3 V
GeneSiC Semiconductor MURT40060R	1 Pair Common Anode	Chassis Mount	-55 °C	150 °C	Three Tower	240 ns	Standard	200 A	200 mA 500 ns	600 V	Three Tower	1.7 V