SI5920 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 8V 4A 1206-8
| Part | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Technology | Configuration | Mounting Type | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power - Max [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 5 V 12 nC | 8 V | -55 °C | 150 °C | 32 mOhm | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Surface Mount | 1 V | 680 pF | Logic Level Gate | 3.12 W | 4 A | 1206-8 ChipFET™ |