SI4420 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 30V 9.5A 8SO
| Part | Drain to Source Voltage (Vdss) | Supplier Device Package | Rds On (Max) @ Id, Vgs [Max] | Mounting Type | Power Dissipation (Max) | Package / Case | Package / Case [y] | Package / Case [x] | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 30 V | 8-SOIC | 8.5 mOhm | Surface Mount | 1.4 W | 8-SOIC | 3.9 mm | 0.154 in | 4.5 V 10 V | 20 V | 3 V | 9.5 A | -55 °C | 150 °C | N-Channel | 50 nC | MOSFET (Metal Oxide) |
Vishay General Semiconductor - Diodes Division | 30 V | 8-SOIC | 8.5 mOhm | Surface Mount | 1.4 W | 8-SOIC | 3.9 mm | 0.154 in | 4.5 V 10 V | 20 V | 3 V | 9.5 A | -55 °C | 150 °C | N-Channel | 50 nC | MOSFET (Metal Oxide) |