MUR40060 Series
Manufacturer: GeneSiC Semiconductor
DIODE MODULE GP 600V 200A 2TOWER
| Part | Current - Average Rectified (Io) (per Diode) | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Supplier Device Package | Package / Case | Speed | Mounting Type | Voltage - Forward (Vf) (Max) @ If [Max] | Diode Configuration | Reverse Recovery Time (trr) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 200 A | 600 V | -55 °C | 150 °C | Twin Tower | Twin Tower | 200 mA 500 ns | Chassis Mount | 1.3 V | 1 Pair Common Cathode | 180 ns | Standard |
GeneSiC Semiconductor | 200 A | 600 V | -55 °C | 150 °C | Twin Tower | Twin Tower | 200 mA 500 ns | Chassis Mount | 1.3 V | 1 Pair Common Anode | 180 ns | Standard |