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DIODE GEN PURP 1.5KV 10A TO263AB

PartReverse Recovery Time (trr)Current - Average Rectified (Io)Supplier Device PackageMounting TypeCurrent - Reverse Leakage @ VrTechnologySpeedVoltage - Forward (Vf) (Max) @ IfOperating Temperature - Junction [Max]Operating Temperature - Junction [Min]Package / CaseVoltage - DC Reverse (Vr) (Max) [Max]
MBRB15H50CT-E3/81
Vishay General Semiconductor - Diodes Division
175 ns
10 A
TO-263AB (D2PAK)
Surface Mount
100 µA
Standard
200 mA
500 ns
1.5 V
150 °C
-55 °C
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
1500 V
TO-220AC
Vishay General Semiconductor - Diodes Division
175 ns
10 A
TO-220AC
Through Hole
100 µA
Standard
200 mA
500 ns
1.5 V
150 °C
-55 °C
TO-220-2
1500 V