IRFI630 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 200V 5.9A TO220-3
| Part | Rds On (Max) @ Id, Vgs | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Supplier Device Package | Vgs (Max) | Drain to Source Voltage (Vdss) | Package / Case | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 400 mOhm | MOSFET (Metal Oxide) | 10 V | 4 V | 800 pF | Through Hole | 5.9 A | 43 nC | -55 °C | 150 °C | N-Channel | TO-220-3 | 20 V | 200 V | TO-220-3 Full Pack Isolated Tab | 35 W |