SQJ412 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 40V 32A PPAK SO-8
| Part | Grade | Supplier Device Package | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Qualification | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Technology | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Automotive | PowerPAK® SO-8 | N-Channel | 120 nC | 20 V | 4.5 V 10 V | AEC-Q101 | 4.1 mOhm | 2.5 V | 32 A | MOSFET (Metal Oxide) | 83 W | -55 °C | 175 ░C | PowerPAK® SO-8 | 5950 pF | Surface Mount | 40 V |