SI6924 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET 2N-CH 28V 4.1A 8TSSOP
| Part | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Configuration | Operating Temperature [Min] | Operating Temperature [Max] | FET Feature | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [custom] | Package / Case [custom] | Supplier Device Package | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 1 W | 10 nC | MOSFET (Metal Oxide) | 4.1 A | Surface Mount | 2 N-Channel (Dual) Common Drain | -55 °C | 150 °C | Logic Level Gate | 33 mOhm | 28 V | 8-TSSOP | 0.173 " | 4.4 mm | 8-TSSOP | 1.5 V |