H11 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

OPTOISO 5.3KV TRANS W/BASE 6DIP

Part	Vce Saturation (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Forward (Vf) (Typ)	Voltage - Isolation	Current - Output / Channel	Input Type	Package / Case	Package / Case	Package / Case	Number of Channels	Supplier Device Package	Mounting Type	Voltage - Output (Max) [Max]	Current - DC Forward (If) (Max) [Max]	Current Transfer Ratio (Min) [Min]	Turn On / Turn Off Time (Typ)	Output Type	Turn On / Turn Off Time (Typ)	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]
Vishay General Semiconductor - Diodes Division H11A4	400 mV	100 °C	-55 °C	1.1 V	5300 Vrms	50 mA	DC	6-DIP	0.3 in	7.62 mm	1	6-DIP	Through Hole	70 V	60 mA	10 %	3 µs
Vishay General Semiconductor - Diodes Division H11B1-X007T	1 V	100 °C	-55 °C	1.1 V	5300 Vrms	100 mA	DC	6-SMD Gull Wing			1	6-SMD	Surface Mount	25 V	60 mA	500 %		Darlington with Base	5 µs 30 µs
Vishay General Semiconductor - Diodes Division H11D1-X009	400 mV	100 °C	-55 °C	1.1 V	5300 Vrms	100 mA	DC	6-SMD Gull Wing			1	6-SMD	Surface Mount	300 V	60 mA	20 %			5 µs 6 µs	5.5 µs	2.5 µs
Vishay General Semiconductor - Diodes Division H11A1-X009	400 mV	100 °C	-55 °C	1.1 V	5300 Vrms	50 mA	DC	6-SMD Gull Wing			1	6-SMD	Surface Mount	70 V	60 mA	50 %	3 µs
Vishay General Semiconductor - Diodes Division H11AA1	400 mV	100 °C	-55 °C		5300 Vrms			6-DIP	0.3 in	7.62 mm	1	6-DIP	Through Hole	30 V	60 mA	20 %
Vishay General Semiconductor - Diodes Division H11AA1-X001	400 mV	100 °C	-55 °C		5300 Vrms			6-DIP	0.3 in	7.62 mm	1	6-DIP	Through Hole	30 V	60 mA	20 %
Vishay General Semiconductor - Diodes Division H11B1-X001	1 V	100 °C	-55 °C	1.1 V	5300 Vrms	100 mA	DC	6-DIP	0.3 in	7.62 mm	1	6-DIP	Through Hole	25 V	60 mA	500 %		Darlington with Base	5 µs 30 µs
Vishay General Semiconductor - Diodes Division H11D1-X017T	400 mV	100 °C	-55 °C	1.1 V	5300 Vrms	100 mA	DC	6-SMD Gull Wing			1	6-SMD	Surface Mount	300 V	60 mA	20 %			5 µs 6 µs	5.5 µs	2.5 µs
Vishay General Semiconductor - Diodes Division H11D1-X007T	400 mV	100 °C	-55 °C	1.1 V	5300 Vrms	100 mA	DC	6-SMD Gull Wing			1	6-SMD	Surface Mount	300 V	60 mA	20 %			5 µs 6 µs	5.5 µs	2.5 µs
Vishay General Semiconductor - Diodes Division H11B1-X007	1 V	100 °C	-55 °C	1.1 V	5300 Vrms	100 mA	DC	6-SMD Gull Wing			1	6-SMD	Surface Mount	25 V	60 mA	500 %		Darlington with Base	5 µs 30 µs