IRFD214 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 250V 450MA 4DIP
| Part | Vgs (Max) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Technology | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 20 V | 4 V | 140 pF | 250 V | 2 Ohm | 450 mA | Through Hole | 4-DIP (0.300" 7.62mm) | 10 V | 1 W | MOSFET (Metal Oxide) | 8.2 nC | -55 °C | 150 °C | N-Channel |