GT10J312 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
IGBT 600V 10A 60W TO220SM
| Part | Vce(on) (Max) @ Vge, Ic | Voltage - Collector Emitter Breakdown (Max) [Max] | Power - Max [Max] | Mounting Type | Reverse Recovery Time (trr) | Operating Temperature | Package / Case | Test Condition | Td (on/off) @ 25°C [custom] | Td (on/off) @ 25°C [custom] | Current - Collector Pulsed (Icm) |
|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 2.7 V | 600 V | 60 W | Through Hole | 200 ns | 150 °C | I2PAK TO-262-3 Long Leads TO-262AA | 10 A 15 V 100 Ohm 300 V | 400 ns | 400 ns | 20 A |