IPW65R Series

Manufacturer: INFINEON

Catalog

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 PACKAGE; 90 MOHM;

Part	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs (Max)	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Qualification	Grade	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON IPW65R090CFD7XKSA1	2513 pF	127 W	10 V	650 V	MOSFET (Metal Oxide)	53 nC	4.5 V	N-Channel	TO-247-3	25 A	90 mOhm	Through Hole	20 V	PG-TO247-3	150 °C	-55 °C
INFINEON IPW65R190CFDAFKSA1	1850 pF		10 V	650 V	MOSFET (Metal Oxide)	68 nC	4.5 V	N-Channel	TO-247-3	17.5 A		Through Hole	20 V	PG-TO247-3	150 °C	-40 °C	190 mOhm	151 W	AEC-Q101	Automotive
INFINEON IPW65R310CFDFKSA1		104.2 W	10 V	650 V	MOSFET (Metal Oxide)	41 nC	4.5 V	N-Channel	TO-247-3	11.4 A	310 mOhm	Through Hole	20 V	PG-TO247-3-1	150 °C	-55 °C					1100 pF
INFINEON IPW65R190C6FKSA1			10 V	650 V	MOSFET (Metal Oxide)	73 nC	3.5 V	N-Channel	TO-247-3	20.2 A		Through Hole	20 V	PG-TO247-3-1	150 °C	-55 °C	190 mOhm	151 W			1620 pF
INFINEON IPW65R045C7300XKSA1			10 V	650 V	MOSFET (Metal Oxide)	93 nC	4 V	N-Channel	TO-247-3	46 A	45 mOhm	Through Hole	20 V	PG-TO247-3	150 °C	-55 °C		227 W			4340 pF
INFINEON IPW65R660CFDFKSA1		62.5 W	10 V	700 V	MOSFET (Metal Oxide)		4.5 V	N-Channel	TO-247-3	6 A	660 mOhm	Through Hole	20 V	PG-TO247-3-1	150 °C	-55 °C					615 pF	22 nC
INFINEON IPW65R280E6FKSA1	950 pF		10 V	650 V	MOSFET (Metal Oxide)	45 nC	3.5 V	N-Channel	TO-247-3	13.8 A	280 mOhm	Through Hole	20 V	PG-TO247-3-1	150 °C	-55 °C		104 W
INFINEON IPW65R280C6FKSA1	950 pF		10 V	650 V	MOSFET (Metal Oxide)	45 nC	3.5 V	N-Channel	TO-247-3	13.8 A	280 mOhm	Through Hole	20 V	PG-TO247-3-1	150 °C	-55 °C		104 W