2SK3662 Series

Catalog

MOSFET N-CH 60V 35A TO220NIS

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Supplier Device Package	Vgs (Max)
Toshiba Semiconductor and Storage 2SK3662(F)	2.5 V	35 W	5120 pF	TO-220-3 Full Pack	N-Channel	91 nC	4 V	10 V	12.5 mOhm	150 °C	35 A	60 V	Through Hole	MOSFET (Metal Oxide)	TO-220NIS	20 V