DRV3245E-Q1 Series

Automotive grade 1 12-V battery 3-phase gate driver unit with accurate current sensing & enhanced pr

Catalog

Automotive grade 1 12-V battery 3-phase gate driver unit with accurate current sensing & enhanced pr

Part	Voltage - Supply [Min]	Voltage - Supply [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Function	Motor Type - AC, DC	Qualification	Motor Type - Stepper	Output Configuration	Supplier Device Package	Grade	Package / Case	Mounting Type	Current - Output	Technology	Interface	Voltage - Load [Min]	Voltage - Load [Max]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Gate Type	Driven Configuration	Input Type	Number of Drivers	Channel Type
Texas Instruments DRV3245CQPHPRQ1	4.5 V	45 V	-40 °C	125 °C	Driver	Brushless DC (BLDC)	AEC-Q100	Multiphase	Half Bridge (3)	48-HTQFP (7x7)	Automotive	48-PowerTQFP	Surface Mount	1 A	Power MOSFET	PWM SPI
Texas Instruments DRV3245BEPHPRQ1	4.5 V	45 V	-40 °C	150 °C	Driver	Brushless DC (BLDC)	AEC-Q100	Multiphase	Half Bridge (3)	48-HTQFP (7x7)	Automotive	48-PowerTQFP	Surface Mount		Power MOSFET	PWM SPI
Texas Instruments DRV3245AEPHPRQ1	4.5 V	45 V	-40 °C	150 °C	Driver	Brushless DC (BLDC)	AEC-Q100	Multiphase	Half Bridge (3)	48-HTQFP (7x7)	Automotive	48-PowerTQFP	Surface Mount	1 A	NMOS	PWM SPI	4.5 V	45 V
Texas Instruments DRV3245SQPHPRQ1	4.5 V	45 V	-40 °C	125 °C			AEC-Q100			48-HTQFP (7x7)	Automotive	48-PowerTQFP	Surface Mount						1 A	1 A	N-Channel MOSFET	Half-Bridge	Non-Inverting	3	3-Phase

Catalog

Automotive grade 1 12-V battery 3-phase gate driver unit with accurate current sensing & enhanced pr

Key Features

• AEC-Q100 qualified for automotive applications:Device temperature grade 1: –40°C to +125°C, TAFunctional Safety-CompliantDeveloped for functional safety applicationsDocumentation availableto aid ISO 26262 system design up to ASIL DSystematic capability up to ASIL D4.5-V to 45-V operating voltageProgrammable peak gate drive currents up to 1ACharge-pump gate driver for 100% Duty CycleCurrent-shunt amplifiers and phase comparatorsA / C Device: 3 current-shunt amplifiers(1) and 3-phase comparators with status through SPI(1)B Device: 2 current-shunt amplifiers and 3-phase comparators with real-time monitor through digital pinsS Device: 3 current-shunt amplifiers3-PWM or 6-PWM input control up to 20 kHzSingle PWM-mode commutation capabilitySupports both 3.3-V and 5-V digital interfaceSerial peripheral interface (SPI)Thermally-enhanced 48-Pin HTQFPProtection features:Internal regulators, battery voltage monitorSPI CRCClock monitorAnalog built-in self testProgrammable dead-time controlMOSFET shoot-through preventionMOSFET VDS overcurrent monitorsGate-source voltage real time monitorOvertemperature warning and Shutdown(1)C device : Low-drift offset high-precision amplifiersAEC-Q100 qualified for automotive applications:Device temperature grade 1: –40°C to +125°C, TAFunctional Safety-CompliantDeveloped for functional safety applicationsDocumentation availableto aid ISO 26262 system design up to ASIL DSystematic capability up to ASIL D4.5-V to 45-V operating voltageProgrammable peak gate drive currents up to 1ACharge-pump gate driver for 100% Duty CycleCurrent-shunt amplifiers and phase comparatorsA / C Device: 3 current-shunt amplifiers(1) and 3-phase comparators with status through SPI(1)B Device: 2 current-shunt amplifiers and 3-phase comparators with real-time monitor through digital pinsS Device: 3 current-shunt amplifiers3-PWM or 6-PWM input control up to 20 kHzSingle PWM-mode commutation capabilitySupports both 3.3-V and 5-V digital interfaceSerial peripheral interface (SPI)Thermally-enhanced 48-Pin HTQFPProtection features:Internal regulators, battery voltage monitorSPI CRCClock monitorAnalog built-in self testProgrammable dead-time controlMOSFET shoot-through preventionMOSFET VDS overcurrent monitorsGate-source voltage real time monitorOvertemperature warning and Shutdown(1)C device : Low-drift offset high-precision amplifiers

Description

The DRV3245E-Q1 device is a FET gate driver IC for three-phase motor-drive applications. The device is intended for high-temperature automotive applications and is designed according to the applicable requirements of ISO 26262 for functional safety applications. The device provides three half-bridge drivers each capable of driving a high-side and low-side N-channel MOSFET while also providing sophisticated protection and monitoring of the FETs. A charge-pump driver enables 100% duty cycle and supports low battery voltages during cold-crank operation. The integration of current-sense amplifiers, integrated phase comparators, and SPI-based configuration enable reduction of the bill of materials (BOM) and space on the printed circuit board (PCB) because of the elimination of most external and passive components. The DRV3245E-Q1 device also integrates diagnostics and protection for each internal block and provides support for common system diagnostic checks each of which can be instantiated and reported through SPI. This flexibility of the integrated features allows the device to integrate seamlessly into a variety of safety architectures. The DRV3245E-Q1 device is a FET gate driver IC for three-phase motor-drive applications. The device is intended for high-temperature automotive applications and is designed according to the applicable requirements of ISO 26262 for functional safety applications. The device provides three half-bridge drivers each capable of driving a high-side and low-side N-channel MOSFET while also providing sophisticated protection and monitoring of the FETs. A charge-pump driver enables 100% duty cycle and supports low battery voltages during cold-crank operation. The integration of current-sense amplifiers, integrated phase comparators, and SPI-based configuration enable reduction of the bill of materials (BOM) and space on the printed circuit board (PCB) because of the elimination of most external and passive components. The DRV3245E-Q1 device also integrates diagnostics and protection for each internal block and provides support for common system diagnostic checks each of which can be instantiated and reported through SPI. This flexibility of the integrated features allows the device to integrate seamlessly into a variety of safety architectures.