TSM4N60 Series
Manufacturer: Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 600V 4A TO252
| Part | Operating Temperature | Mounting Type | Vgs (Max) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | FET Type | Rds On (Max) @ Id, Vgs | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 150 °C | Surface Mount | 30 V | TO-252 (DPAK) | 12 nC | 86.2 W | 4 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 545 pF | 5 V | 10 V | 600 V | N-Channel | 2.5 Ohm | MOSFET (Metal Oxide) |