High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 2.0 A, 0.123 Ω@4V, SOT-323F(UFM)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 2.0 A, 0.123 Ω@4V, SOT-323F(UFM)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 2.0 A, 0.123 Ω@4V, SOT-323F(UFM)
| Part | Power Dissipation (Max) | Technology | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drain to Source Voltage (Vdss) | FET Type | Rds On (Max) @ Id, Vgs | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 500 mW | MOSFET (Metal Oxide) | 150 °C | 1.5 V | 4 V | 20 V | N-Channel | 123 mOhm | Surface Mount | 2 A | UFM | 1 V | 195 pF | 10 V | 3.4 nC |