FJY3002R Series

NPN Epitaxial Silicon Transistor with Bias Resistor

Catalog

NPN Epitaxial Silicon Transistor with Bias Resistor

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Resistor - Base (R1)	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Resistor - Emitter Base (R2)	Package / Case	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce
ON Semiconductor FJY3003R	50 V	Surface Mount	22 kOhms	100 nA	100 mA	22 kOhms	SC-89 SOT-490	200 mW	56 hFE	NPN - Pre-Biased	300 mV	250 MHz	SC-89-3
ON Semiconductor FJY3004R-ON	50 V	Surface Mount	47 kOhms	100 nA	100 mA	47000 Ohms	SC-89 SOT-490	200 mW	56 hFE	NPN - Pre-Biased	300 mV	250 MHz	SOT-523F
ON Semiconductor FJY3007R	50 V	Surface Mount	22 kOhms	100 nA	100 mA	47000 Ohms	SC-89 SOT-490	200 mW	68	NPN - Pre-Biased	300 mV	250 MHz	SC-89-3
ON Semiconductor FJY3001R	50 V	Surface Mount	4.7 kOhms	100 nA	100 mA	4700 Ohms	SC-89 SOT-490	200 mW	22	NPN - Pre-Biased	300 mV	250 MHz	SC-89-3
ON Semiconductor FJY3002R	50 V	Surface Mount	10 kOhms	100 nA	100 mA	10 kOhms	SC-89 SOT-490	200 mW		NPN - Pre-Biased	300 mV	250 MHz	SOT-523F	30 hFE
ON Semiconductor FJY3005R	50 V	Surface Mount	4.7 kOhms	100 nA	100 mA	10 kOhms	SC-89 SOT-490	200 mW		NPN - Pre-Biased	300 mV	250 MHz	SOT-523F	30 hFE
ON Semiconductor FJY3003R	50 V	Surface Mount	22 kOhms	100 nA	100 mA	22 kOhms	SC-89 SOT-490	200 mW	56 hFE	NPN - Pre-Biased	300 mV	250 MHz	SOT-523F

NPN Epitaxial Silicon Transistor with Bias Resistor

• 100 mA Output Current Capability

• Built-in Bias Resistor (R1=10KΩ, R2=10KΩ)

Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.