LM2105 Series

107-V 0.5-A/0.8-A half-bridge gate driver with 5-V UVLO and integrated bootstrap diode

Catalog

107-V 0.5-A/0.8-A half-bridge gate driver with 5-V UVLO and integrated bootstrap diode

Part	Mounting Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Load Type	Fault Protection	Applications	Package / Case	Features	Current - Output / Channel	Interface	Technology	Current - Peak Output	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case [y]	Package / Case [x]
Texas Instruments LM2105DSGR	Surface Mount	5 V	18 V	Capacitive	UVLO	DC Motors General Purpose	8-WFDFN Exposed Pad	Bootstrap Circuit	500 mA	Logic	NMOS	800 mA	-40 °C	125 ¯C	8-WSON (2x2)
Texas Instruments LM2105DR	Surface Mount	5 V	18 V	Capacitive	UVLO	DC Motors General Purpose	8-SOIC	Bootstrap Circuit	500 mA	Logic	NMOS	800 mA	-40 °C	125 ¯C	8-SOIC	3.9 mm	0.154 in

Catalog

107-V 0.5-A/0.8-A half-bridge gate driver with 5-V UVLO and integrated bootstrap diode

Key Features

• Drives two N-channel MOSFETs in half-bridge configurationIntegrated bootstrap diode5-V typical undervoltage lockout on GVDD107-V absolute maximum voltage on BST–19.5-V absolute maximum negative transient voltage handling on SH0.5-A/0.8-A peak source/sink currents115-ns typical propagation delayDrives two N-channel MOSFETs in half-bridge configurationIntegrated bootstrap diode5-V typical undervoltage lockout on GVDD107-V absolute maximum voltage on BST–19.5-V absolute maximum negative transient voltage handling on SH0.5-A/0.8-A peak source/sink currents115-ns typical propagation delay

Description

The LM2105 is a compact, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The integrated bootstrap diode saves board space and reduces system cost by eliminating the need for an external discrete diode. The –1-V DC and –19.5-V transient negative voltage handling on the SH pin improve the system robustness in high noise applications. The small, thermally-enhanced 8-pin WSON package improves PCB layout by allowing the driver to be placed closer to the motor phases. The LM2105 is also available in an 8-pin SOIC package compatible with industry standard pinouts. Undervoltage lockout (UVLO) is provided on both the low-side and the high-side power rails for protection during power up and power down. The LM2105 is a compact, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The integrated bootstrap diode saves board space and reduces system cost by eliminating the need for an external discrete diode. The –1-V DC and –19.5-V transient negative voltage handling on the SH pin improve the system robustness in high noise applications. The small, thermally-enhanced 8-pin WSON package improves PCB layout by allowing the driver to be placed closer to the motor phases. The LM2105 is also available in an 8-pin SOIC package compatible with industry standard pinouts. Undervoltage lockout (UVLO) is provided on both the low-side and the high-side power rails for protection during power up and power down.