IRC530 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 100V 14A TO220-5
| Part | Power Dissipation (Max) [Max] | Technology | FET Feature | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Package / Case | Vgs(th) (Max) @ Id | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 88 W | MOSFET (Metal Oxide) | Current Sensing | 10 V | TO-220-5 | N-Channel | 700 pF | 26 nC | -55 °C | 175 ░C | 100 V | TO-220-5 | 4 V | 20 V | 14 A | 160 mOhm | Through Hole |