MURTA200 Series

Catalog

DIODE MODULE GP 200V 100A 3TOWER

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Speed [Min]	Technology	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Reverse Leakage @ Vr	Diode Configuration	Supplier Device Package	Package / Case
GeneSiC Semiconductor MURTA20020	200 V	200 mA 500 ns	Standard	Chassis Mount	-55 °C	150 °C	100 A	1.3 V	25 µA	1 Pair Common Cathode	Three Tower	Three Tower
GeneSiC Semiconductor MURTA20060R	600 V	200 mA 500 ns	Standard	Chassis Mount	-55 °C	150 °C	100 A	1.7 V	25 µA	1 Pair Common Anode	Three Tower	Three Tower
GeneSiC Semiconductor MURTA20040	400 V	200 mA 500 ns	Standard	Chassis Mount	-55 °C	150 °C	100 A	1.3 V	25 µA	1 Pair Common Cathode	Three Tower	Three Tower
GeneSiC Semiconductor MURTA20040R	400 V	200 mA 500 ns	Standard	Chassis Mount	-55 °C	150 °C	100 A	1.3 V	25 µA	1 Pair Common Anode	Three Tower	Three Tower
GeneSiC Semiconductor MURTA20020R	200 V	200 mA 500 ns	Standard	Chassis Mount	-55 °C	150 °C	100 A	1.3 V	25 µA	1 Pair Common Anode	Three Tower	Three Tower
GeneSiC Semiconductor MURTA200120	1.2 kV	200 mA 500 ns	Standard	Chassis Mount	-55 °C	150 °C	100 A	2.6 V	25 µA	1 Pair Common Cathode	Three Tower	Three Tower
GeneSiC Semiconductor MURTA200120R	1.2 kV	200 mA 500 ns	Standard	Chassis Mount	-55 °C	150 °C	100 A	2.6 V	25 µA	1 Pair Common Anode	Three Tower	Three Tower