1N5401 Series
Manufacturer: Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
| Part | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If [Max] | Package / Case | Mounting Type | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Capacitance @ Vr, F | Grade | Voltage - DC Reverse (Vr) (Max) [Max] | Qualification | Speed [Min] | Supplier Device Package | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 3 A | 5 µA | 1.1 V | DO-201AD Axial | Through Hole | -55 °C | 150 °C | 25 pF | Automotive | 100 V | AEC-Q101 | 200 mA 500 ns | DO-201AD | Standard |
Taiwan Semiconductor Corporation | 3 A | 5 µA | 1.1 V | DO-201AD Axial | Through Hole | -55 °C | 150 °C | 25 pF | 100 V | 200 mA 500 ns | DO-201AD | Standard | ||
Taiwan Semiconductor Corporation | 3 A | 5 µA | 1.1 V | DO-201AD Axial | Through Hole | -55 °C | 150 °C | 25 pF | 100 V | 200 mA 500 ns | DO-201AD | Standard |