IS43TR16256 Series
Manufacturer: ISSI, Integrated Silicon Solution Inc
IC DRAM 4GBIT PARALLEL 96TWBGA
| Part | Clock Frequency | Memory Size | Package / Case | Memory Interface | Memory Type | Memory Format | Voltage - Supply [Min] | Voltage - Supply [Max] | Mounting Type | Write Cycle Time - Word, Page | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Access Time | Technology | Memory Organization | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | 800 MHz | 512 kB | 96-TFBGA | Parallel | Volatile | DRAM | 1.425 V | 1.575 V | Surface Mount | 15 ns | 96-TWBGA (9x13) | 95 °C | 0 °C | 20 ns | SDRAM - DDR3 | 256 M | ||
ISSI, Integrated Silicon Solution Inc | 933 MHz | 512 kB | 96-TFBGA | Parallel | Volatile | DRAM | 1.425 V | 1.575 V | Surface Mount | 15 ns | 96-TWBGA (9x13) | 95 °C | 0 °C | 20 ns | SDRAM - DDR3 | 256 M | ||
ISSI, Integrated Silicon Solution Inc | 1066 MHz | 512 kB | 96-TFBGA | Parallel | Volatile | DRAM | 1.425 V | 1.575 V | Surface Mount | 15 ns | 96-TWBGA (9x13) | 95 °C | -40 °C | 20 ns | SDRAM - DDR3 | 256 M | Automotive | AEC-Q100 |
ISSI, Integrated Silicon Solution Inc | 667 MHz | 512 kB | 96-TFBGA | Parallel | Volatile | DRAM | 1.425 V | 1.575 V | Surface Mount | 15 ns | 96-TWBGA (9x13) | 95 °C | -40 °C | 20 ns | SDRAM - DDR3 | 256 M | ||
ISSI, Integrated Silicon Solution Inc | 667 MHz | 512 kB | 96-TFBGA | Parallel | Volatile | DRAM | 1.283 V | 1.45 V | Surface Mount | 15 ns | 96-TWBGA (9x13) | 95 °C | -40 °C | 20 ns | SDRAM - DDR3L | 256 M | ||
ISSI, Integrated Silicon Solution Inc | 933 MHz | 512 kB | 96-TFBGA | Parallel | Volatile | DRAM | 1.425 V | 1.575 V | Surface Mount | 15 ns | 96-TWBGA (9x13) | 95 °C | -40 °C | 20 ns | SDRAM - DDR3 | 256 M | ||
ISSI, Integrated Silicon Solution Inc | 1066 MHz | 512 kB | 96-TFBGA | Parallel | Volatile | DRAM | 1.425 V | 1.575 V | Surface Mount | 15 ns | 96-TWBGA (9x13) | 95 °C | -40 °C | 20 ns | SDRAM - DDR3 | 256 M | Automotive | AEC-Q100 |
ISSI, Integrated Silicon Solution Inc | 933 MHz | 512 kB | 96-TFBGA | Parallel | Volatile | DRAM | 1.283 V | 1.45 V | Surface Mount | 15 ns | 96-TWBGA (9x13) | 95 °C | 0 °C | 20 ns | SDRAM - DDR3L | 256 M | ||
ISSI, Integrated Silicon Solution Inc | 933 MHz | 512 kB | 96-TFBGA | Parallel | Volatile | DRAM | 1.425 V | 1.575 V | Surface Mount | 15 ns | 96-TWBGA (9x13) | 95 °C | 0 °C | 20 ns | SDRAM - DDR3 | 256 M | ||
ISSI, Integrated Silicon Solution Inc | 800 MHz | 512 kB | 96-TFBGA | Parallel | Volatile | DRAM | 1.283 V | 1.45 V | Surface Mount | 15 ns | 96-TWBGA (9x13) | 95 °C | -40 °C | 20 ns | SDRAM - DDR3L | 256 M |