NJD35N04 Series

4.0 A, 350 V NPN Darlington Bipolar Power Transistor

Catalog

4.0 A, 350 V NPN Darlington Bipolar Power Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Package / Case	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]
ON Semiconductor NJVNJD35N04T4G	2000	45 W	Surface Mount	1.5 V	50 µA	350 V	90 MHz	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	150 °C	-65 °C	4 A

Catalog

4.0 A, 350 V NPN Darlington Bipolar Power Transistor

Key Features

• Exceptional Safe Operating Area

• High VCE

• High Current Gain

• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• These are PbFree Devices

Description

This high voltage, bipolar power Darlington transistor has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control.