FQB4N80 Series

N-Channel QFET® MOSFET 800V, 3.9A, 3.6Ω

Catalog

N-Channel QFET® MOSFET 800V, 3.9A, 3.6Ω

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FQB4N80TM	10 V	880 pF	N-Channel	MOSFET (Metal Oxide)	3.13 W 130 W	3.9 A	30 V	3.6 Ohm	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5 V	Surface Mount	800 V	-55 °C	150 °C	25 nC

Catalog

N-Channel QFET® MOSFET 800V, 3.9A, 3.6Ω

Key Features

• 3.9A, 800V, RDS(on)= 3.6Ω(Max.) @VGS= 10 V, ID= 1.95A

• Low gate charge ( Typ. 19nC)

• Low Crss( Typ. 8.6pF)

• 100% avalanche tested

• RoHS compliant

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.