25ETS10 Series

Catalog

DIODE GEN PURP 1KV 25A TO263AB

Part	Speed	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Package / Case	Speed [Min]
Vishay General Semiconductor - Diodes Division VS-25ETS10STRRPBF	200 mA 500 ns	-40 °C	150 °C	25 A	100 µA	TO-263AB (D2PAK)	1000 V	Standard	1.14 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division VS-25ETS10STRLPBF	200 mA 500 ns	-40 °C	150 °C	25 A	100 µA	TO-263AB (D2PAK)	1000 V	Standard	1.14 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division VS-25ETS10STRR-M3		-40 °C	150 °C	25 A	100 µA	TO-263AB (D2PAK)	1000 V	Standard	1.14 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 mA 500 ns
Vishay General Semiconductor - Diodes Division VS-25ETS10SPBF	200 mA 500 ns	-40 °C	150 °C		100 µA	TO-263AB (D2PAK)	1000 V	Standard	1.14 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB