MBR50060 Series
Manufacturer: GeneSiC Semiconductor
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DIODE MOD SCHOT 600V 250A 2TOWER
| Part | Voltage - Forward (Vf) (Max) @ If | Diode Configuration | Package / Case | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Current - Reverse Leakage @ Vr | Mounting Type | Technology | Supplier Device Package | Speed | Current - Average Rectified (Io) (per Diode) | Voltage - DC Reverse (Vr) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GeneSiC Semiconductor | 800 mV | 1 Pair Common Cathode | Twin Tower | -55 °C | 150 °C | 1 mA | Chassis Mount | Schottky | Twin Tower | 200 mA 500 ns | 250 A | 600 V |
GeneSiC Semiconductor | 800 mV | 1 Pair Common Anode | Twin Tower | -55 °C | 150 °C | 1 mA | Chassis Mount | Reverse Polarity Schottky | Twin Tower | 200 mA 500 ns | 250 A | 600 V |