AOWF11 Series

Catalog

MOSFET N-CH 650V 11A TO262F

Part	Power Dissipation (Max)	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Alpha & Omega Semiconductor Inc. AOWF11S65	28 W	30 V	150 °C	-55 °C	I2PAK TO-262-3 Long Leads TO-262AA	11 A	Through Hole	N-Channel	10 V	MOSFET (Metal Oxide)	650 V	646 pF	4 V	399 mOhm	TO-262F	13.2 nC
Alpha & Omega Semiconductor Inc. AOWF11N70	28 W	30 V	150 °C	-55 °C	I2PAK TO-262-3 Long Leads TO-262AA	11 A	Through Hole	N-Channel	10 V	MOSFET (Metal Oxide)	700 V		4.5 V	870 mOhm	TO-262F	45 nC
Alpha & Omega Semiconductor Inc. AOWF11N60	27.8 W	30 V	150 °C	-55 °C	I2PAK TO-262-3 Long Leads TO-262AA	11 A	Through Hole	N-Channel	10 V	MOSFET (Metal Oxide)	600 V		4.5 V	650 mOhm	TO-262F		1990 pF