LM74721-Q1 Series
Automotive, TVS less low IQ reverse battery protection ideal diode controller, active rectification
Manufacturer: Texas Instruments
Catalog
Automotive, TVS less low IQ reverse battery protection ideal diode controller, active rectification
Key Features
• AEC-Q100 qualified with the following resultsDevice temperature grade 1: –40°C to +125°C ambient operating temperature rangeDevice HBM ESD classification level 2Device CDM ESD classification level C4B3-V to 65-V input rangeReverse input protection down to –33 VIntegrated VDS clamp for Input TVS less operation for ISO7637 pulse suppressionLow quiescent current 35 µA (max) in operationLow 3.3-µA (max) shutdown current (EN = Low)Ideal diode operation with 17-mV A to C forward voltage drop regulationDrives external back-to-back N-Channel MOSFETsIntegrated 30-mA boost regulatorFast response to reverse current blocking: 0.5 µsActive rectification up to 100 kHzAdjustable overvoltage protectionAvailable in space saving 12-pin WSON packagePin-to-pin compatible withLM74720-Q1AEC-Q100 qualified with the following resultsDevice temperature grade 1: –40°C to +125°C ambient operating temperature rangeDevice HBM ESD classification level 2Device CDM ESD classification level C4B3-V to 65-V input rangeReverse input protection down to –33 VIntegrated VDS clamp for Input TVS less operation for ISO7637 pulse suppressionLow quiescent current 35 µA (max) in operationLow 3.3-µA (max) shutdown current (EN = Low)Ideal diode operation with 17-mV A to C forward voltage drop regulationDrives external back-to-back N-Channel MOSFETsIntegrated 30-mA boost regulatorFast response to reverse current blocking: 0.5 µsActive rectification up to 100 kHzAdjustable overvoltage protectionAvailable in space saving 12-pin WSON packagePin-to-pin compatible withLM74720-Q1
Description
AI
The LM74721-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON and OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –33-V DC. An integrated ideal diode controller (GATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. Integrated VDS clamp feature enables input TVS less system designs for automotive ISO7637 pulse suppression. A strong boost regulator with fast turn ON and OFF comparators ensures robust and efficient MOSFET switching performance during automotive testing such as ISO16750 or LV124, where an ECU is subjected to input short interruptions and AC superimpose input signals up to 100-kHz frequency. Low Quiescent Current 35 µA (maximum) in operation enables always ON system designs. With a second MOSFET in the power path, the device allows load disconnect control using EN pin. Quiescent current reduces to 3.3 µA (maximum) with EN low. The device features an adjustable overvoltage cutoff protection feature for load dump protection.
The LM74721-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON and OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –33-V DC. An integrated ideal diode controller (GATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. Integrated VDS clamp feature enables input TVS less system designs for automotive ISO7637 pulse suppression. A strong boost regulator with fast turn ON and OFF comparators ensures robust and efficient MOSFET switching performance during automotive testing such as ISO16750 or LV124, where an ECU is subjected to input short interruptions and AC superimpose input signals up to 100-kHz frequency. Low Quiescent Current 35 µA (maximum) in operation enables always ON system designs. With a second MOSFET in the power path, the device allows load disconnect control using EN pin. Quiescent current reduces to 3.3 µA (maximum) with EN low. The device features an adjustable overvoltage cutoff protection feature for load dump protection.
