SIA110 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 100V 5.4A/12A PPAK
| Part | Vgs(th) (Max) @ Id | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Technology | FET Type | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 4 V | 20 V | 5.4 A 12 A | 13 nC | 100 V | 55 mOhm | -55 °C | 150 °C | PowerPAK® SC-70-6 | 3.5 W 19 W | 10 V | 7.5 V | 550 pF | PowerPAK® SC-70-6 | MOSFET (Metal Oxide) | N-Channel | Surface Mount |